N/A

-

底座安装

SP6

SP6

微芯片技术

微芯片技术

Details

34

Bulk

APTM120

34A

活跃

1

Microchip

-40°C ~ 150°C (TJ)

Tube

POWER MOS 7®

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

4 N-Channel (Half Bridge)

780W

348mOhm @ 17A, 10V

5V @ 5mA

10300pF @ 25V

374nC @ 10V

1200V (1.2kV)

Discrete Semiconductor Modules

Dual N

-

Discrete Semiconductor Modules

N/A

-

底座安装

SP3

SP3

微芯片技术

Bulk

APTM100

19A

活跃

-40°C ~ 150°C (TJ)

POWER MOS 8™

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

4 N-Channel (Half Bridge)

357W

552mOhm @ 16A, 10V

5V @ 2.5mA

6800pF @ 25V

260nC @ 10V

1000V (1kV)

-

Discrete Semiconductor Modules

N/A

-

底座安装

SP6

SP6

微芯片技术

微芯片技术

Details

50

Bulk

APTM120

50A

活跃

1

Microchip

-40°C ~ 150°C (TJ)

Tube

-

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

2 N-Channel (Half Bridge)

1250W

240mOhm @ 25A, 10V

5V @ 6mA

15200pF @ 25V

600nC @ 10V

1200V (1.2kV)

Discrete Semiconductor Modules

Dual N

-

Discrete Semiconductor Modules

N/A

-

底座安装

SP6

SP6-P

微芯片技术

活跃

104

Bulk

APTM20

104A

-40°C ~ 150°C (TJ)

-

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

6 N-Channel (3-Phase Bridge)

390W

19mOhm @ 52A, 10V

5V @ 2.5mA

7220pF @ 25V

140nC @ 10V

200V

Dual N

-

Discrete Semiconductor Modules

N/A

-

通孔

TO-220-5 Full Pack

TO-220-5 Full-Pak

Polystyrene

International Rectifier

120636

Brady

Bulk

11A

活跃

-55°C ~ 150°C (TJ)

-

Safety Signs

18W

2 N-Channel (Dual)

72.5mOhm @ 6.6A, 10V

5V @ 250µA

490pF @ 50V

18nC @ 10V

100V

Respirator Required

Standard

N/A

-

表面贴装

6-TSSOP, SC-88, SOT-363

SOT-363

Diodes Incorporated

表面贴装

10000

Diodes Incorporated

Details

Tape & Reel (TR)

115mA (Ta), 130mA (Ta)

活跃

139690

Schneider

0.115/0.13(A)

Military

SOT-363

-55C to 150C

±20(V)

Enhancement

2

无

-55°C ~ 150°C (TJ)

卷带

Automotive, AEC-Q101

小信号

MOSFETs

Si

6

N/P

0.2(W)

200mW (Ta)

N and P-Channel Complementary

13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V

2.5V @ 250µA, 2V @ 1mA

50pF @ 25V, 45pF @ 25V

-

60V, 50V

MOSFET

Standard

Sweat

MOSFET

N/A

-

17 Weeks

Surface

8-SOIC (0.154, 3.90mm Width)

YES

8-SOP

8

SILICON

Diodes Incorporated

Details

Tape & Reel (TR)

5.4A (Ta)

活跃

SMALL OUTLINE, R-PDSO-G8

小概要

1

PLASTIC/EPOXY

30

150 °C

有

RECTANGULAR

2

活跃

DIODES INC

5.21

5.4 A

TSDR6120MA10M-SSAC

CE, CSA, UL

SSAC

20

2500

Diodes Incorporated

-55°C ~ 150°C (TJ)

Reel

Automotive, AEC-Q101

e3

0.250 in Flat Blade

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

MOSFETs

Si

DUAL

鸥翼

260

compliant

AEC-Q101

R-PDSO-G8

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

1.25W (Ta)

2 N-Channel (Dual)

SWITCHING

27mOhm @ 7A, 10V

3V @ 250µA

604pF @ 20V

12.9nC @ 10V

40V

N-CHANNEL

MOSFET

230 VAC

7.1 A

0.027 Ω

40 V

METAL-OXIDE SEMICONDUCTOR

17.2 W

Standard

重复循环

MOSFET

N/A

-

表面贴装

SOT-1205, 8-LFPAK56

LFPAK56D

NXP USA Inc.

Bulk

40A

活跃

-55°C ~ 175°C (TJ)

Automotive, AEC-Q101, TrenchMOS™

64W

2 N-Channel (Dual)

5.6mOhm @ 25A, 10V

4V @ 1mA

1969pF @ 25V

29.7nC @ 10V

30V

Standard

N/A

-

表面贴装

6-TSSOP, SC-88, SOT-363

SOT-363

Micro Commercial Co

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

SI2129

1A

活跃

3000

Micro Commercial Components (MCC)

Micro Commercial Components (MCC)

-55°C ~ 150°C (TJ)

-

MOSFET (Metal Oxide)

2 P-Channel (Dual)

243mW

140mOhm @ 1A, 4.5V

1V @ 250µA

327pF @ 10V

4.5nC @ 4.5V

20V

-

MCC

N/A

-

底座安装

D-3 Module

NO

D3

7

碳化硅

微芯片技术

RECTANGULAR

Microsemi Corporation

2

不推荐

MICROSEMI CORP

8.44

250 A

250

Bulk

APTMC120

250A (Tc)

活跃

FLANGE MOUNT, R-XUFM-X7

FLANGE MOUNT

UNSPECIFIED

-40 °C

125 °C

有

APTMC120AM08CD3AG

-40°C ~ 150°C (TJ)

-

EAR99

FET 通用电源

Silicon Carbide (SiC)

UPPER

UNSPECIFIED

compliant

R-XUFM-X7

2 N-Channel (Half Bridge)

增强型MOSFET

1.1

ISOLATED

1100W

SWITCHING

10mOhm @ 200A, 20V

2.2V @ 10mA (Typ)

9500pF @ 1000V

490nC @ 20V

1200V (1.2kV)

N-CHANNEL

250 A

0.01 Ω

550 A

1200 V

Dual N

METAL-OXIDE SEMICONDUCTOR

1100 W

-

N/A

-

底座安装

SP3

SP3

微芯片技术

微芯片技术

Details

22

Bulk

APTM100

22A

活跃

1

Microchip

-40°C ~ 150°C (TJ)

Tube

-

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

4 N-Channel (Half Bridge)

390W

420mOhm @ 11A, 10V

5V @ 2.5mA

5200pF @ 25V

186nC @ 10V

1000V (1kV)

Discrete Semiconductor Modules

Dual N

-

Discrete Semiconductor Modules

N/A

-

底座安装

SP6

NO

SP6

12

SILICON

微芯片技术

活跃

1

Microchip

微芯片技术

Details

FLANGE MOUNT, R-XUFM-X12

FLANGE MOUNT

1

UNSPECIFIED

未说明

150 °C

有

APTM20HM10FG

RECTANGULAR

4

活跃

MICROSEMI CORP

5.22

175 A

175

Bulk

APTM20

175A

-40°C ~ 150°C (TJ)

Tube

-

e1

有

EAR99

锡银铜

雪崩 额定

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

UPPER

UNSPECIFIED

未说明

compliant

12

R-XUFM-X12

不合格

4 N-Channel (Half Bridge)

增强型MOSFET

694

ISOLATED

694W

SWITCHING

12mOhm @ 87.5A, 10V

5V @ 5mA

13700pF @ 25V

224nC @ 10V

200V

N-CHANNEL

Discrete Semiconductor Modules

0.012 Ω

700 A

200 V

Dual N

2500 mJ

METAL-OXIDE SEMICONDUCTOR

-

Discrete Semiconductor Modules

N/A

-

底座安装

SP6

SP6-P

微芯片技术

微芯片技术

Details

28

Bulk

APTC80

28A

活跃

1

Microchip

-40°C ~ 150°C (TJ)

Tube

-

Discrete Semiconductor Modules

MOSFET (Metal Oxide)

6 N-Channel (3-Phase Bridge)

277W

150mOhm @ 14A, 10V

3.9V @ 2mA

4507pF @ 25V

180nC @ 10V

800V

Discrete Semiconductor Modules

Dual N

-

Discrete Semiconductor Modules

N/A

-

1206 (3216 Metric)

1206

KOA Speer Electronics, Inc.

Tape & Reel (TR)

活跃

-55°C ~ 155°C

SG73S-RT

0.126 L x 0.063 W (3.20mm x 1.60mm)

±1%

2

±200ppm/°C

19.6 Ohms

厚膜

0.333W, 1/3W

-

Anti-Sulfur, Automotive AEC-Q200, Moisture Resistant, Pulse Withstanding

0.028 (0.70mm)

-

N/A

-

表面贴装

8-WFDFN Exposed Pad

8-WPAK

Renesas Electronics America Inc

Bulk

15A, 30A

Obsolete

150°C (TJ)

-

10W, 20W

2 N-Channel (Half Bridge)

9.4mOhm @ 7.5A, 10V

-

1190pF @ 10V

7.1nC @ 4.5V

30V

Logic Level Gate, 4.5V Drive

N/A

-

表面贴装

SOT-563, SOT-666

SOT-563

Diodes Incorporated

Tape & Reel (TR)

DMN62

490mA (Ta)

活跃

-55°C ~ 150°C (TJ)

Automotive, AEC-Q101

MOSFET (Metal Oxide)

2 N-Channel (Dual)

470mW (Ta)

2Ohm @ 100mA, 4.5V

1V @ 250µA

32pF @ 30V

0.5nC @ 4.5V

60V

Standard

N/A

-

通孔

EPM15

EPM15

PEI-Genesis

Bulk

活跃

65A

-40°C ~ 150°C (TJ)

*

-

2 N-Channel (Dual)

4.3mOhm @ 40A, 10V

4V @ 250µA

6180pF @ 25V

148nC @ 10V

75V

Standard

N/A

-

SMD-24

硅树脂弹性体

Rectangular

t-Global Technology

Box

TG-A486G

活跃

150 V

2.5 V

N-Channel

+ 175 C

- 20 V, + 20 V

- 55 C

SMD/SMT

Enhancement

97 nC

24 mOhms

50 A

TG-A486G

Conductive Pad, Sheet

Gray

Si

6 Channel

-

24 Months

Tacky - Both Sides

-

购买日期

-

305.00mm x 200.00mm

6.0W/m-K

-

0.0394 (1.000mm)

N/A

-

表面贴装

8-WDFN Exposed Pad

8-DFN-EP (3x3)

Alpha & Omega Semiconductor Inc.

Bulk

AON7934

13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)

Obsolete

-55°C ~ 150°C (TJ)

-

2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)

2 N-Channel (Dual) Asymmetrical

10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V

2.2V @ 250µA

485pF @ 15V, 807pF @ 15V

11nC @ 10V, 17.5nC @ 10V

30V

Standard

N/A

-

-30°C

4x

031621

-5°C

+70°C

500V

无

+70°C

100m

每米售价

0.75mm²

有

300V

Halogen-free,Flame-retardant,Oil-resistant

Copper, blank, Class 5 = fine

6.50mm

Grey

有

H-JZ

N/A

-

Fairchild Semiconductor

DILER-31(110V50/60HZ)

Klockner-Moeller, Div of Eaton

Bulk

活跃

*

N/A

-

表面贴装

SOT-1205, 8-LFPAK56

LFPAK56D

Cast Iron

52100 Steel;Black Oxide

NXP USA Inc.

SF-19T

Sealmaster

Bulk

40A

活跃

-55°C ~ 175°C (TJ)

-

68W

2 N-Channel (Dual)

5.3mOhm @ 10A, 5V

2.1V @ 1mA

3065pF @ 25V

26.7nC @ 5V

30V

Four Bolt Flange

逻辑电平门

N/A

-

表面贴装

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

onsemi

Bulk

10.3A (Ta), 13.3A (Ta)

最后一次购买

-55°C ~ 150°C (TJ)

-

1.1W (Ta), 1.16W (Ta)

2 N-Channel (Dual), Schottky

6.5mOhm @ 10A, 10V, 4.1mOhm @ 15A, 10V

2.2V @ 250µA

1150pF @ 15V, 1590pF @ 15V

19.1nC @ 10V, 24.9nC @ 10V

30V

Standard

N/A

-

底座安装

Module

-

Polyethylene

微芯片技术

- 40 C

1

螺钉安装

Microchip

微芯片技术

19 mOhms

Details

124 A

Bulk

MSCSM70

124A (Tc)

活跃

1200 V

700 V

2.4 V

365 W

+ 125 C

- 10 V, + 23 V

-40°C ~ 175°C (TJ)

-

MOSFET Power Module

Black

Discrete Semiconductor Modules

Silicon Carbide (SiC)

2 N Channel (Phase Leg)

365W (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

4500pF @ 700V

215nC @ 20V

700V

Discrete Semiconductor Modules

-

Rectifier Modules

1.8 V

Discrete Semiconductor Modules

10 m

N/A

-

表面贴装

4

无

Compliant

Tape & Reel (TR)

Simple Reset/Power-On Reset

125 °C

-40 °C

245 mW

5.5 V

1 V

7 µA

低电平有效

1

1.2 s

2.34 V

2.46 V

2.4 V

2.34 V

2.46 V

无铅